The most common type of insulated gate FET which is used in many different types of electronic circuits is called the Metal Oxide Semiconductor Field Effect Transistor or MOSFET for short. The MOSFET is a type of semiconductor device called an Insulated Gate Field Effect Transistor. To Download the datasheet just copy and paste the below link in your browser.As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying channel. Store or operate the transistor at temperatures between -65☌ and +200 ☌.A proper and suitable heatsink is essential to use with the transistor.The max collector to emitter voltage is 80V therefore the driven load should be under 64V.The max collector current is 1000mA so the driven load should be under 800mA.Therefore use it at least 20% below from its absolute max ratings. may damage it or weakens its performance. Always use the transistor 20% below from its absolute maximum ratings.Safe Operating Guidelines / Absolute Maximum Ratings:įor getting long term and stable performance with the transistor follow the below given guidelines. It can also be used in normal voltage and battery operated circuits.Īudio Amplifiers such as guitar and other audio amplifiers But it is not only limited to high voltage circuits.
Moreover, it can also be used in switching circuits and voltage regulator circuits. The transistor is basically designed to use in the circuits which require high voltage and low current such as inverters etc.ĢN3440 can be used in variety of applications that require high voltage and low current for example it can be used in these types of inverters in which the load requires high voltage but it has less current requirements. Looking at the specs of the transistor the max collector current of the transistor is 1A, max collector to emitter voltage is 250V, max collector to base voltage is 300V, max emitter to base voltage is 7V, max transition frequency is 15MHz, min to max DC current gain is 30 to 160 and total dissipation is 10W. The transistor is basically designed for high voltage applications of upto 250V. 2N3440 is an NPN transistor available in TO-39 metal package. If you are looking for a transistor that has a high collector to emitter voltage and low collector current then 2N3440 might be a good choice.
Max Storage, Operating & Junction temperature range: -65 to +200 CentigradeĢN3440 Transistor Explained / Description:.Minimum & Maximum DC Current Gain (hFE): 30 to 160.
Max Collector Dissipation (Pc): 10 Watt.Max Collector-Emitter Voltage (VCE): 250V.Max Collector Current(IC): 1A or 1000mA.
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